111 silicon

кремній, орієнтований в кристалографічній площині 111

English-Ukrainian dictionary of microelectronics. 2013.

Смотреть что такое "111 silicon" в других словарях:

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  • Deal–Grove model — The Deal–Grove model mathematically describes the growth of an oxide layer on the surface of a material. In particular, it is used to analyze thermal oxidation of silicon in semiconductor device fabrication. The model was first published in 1965… …   Wikipedia

  • Deal-Grove model — The Deal Grove model mathematically describes the growth of an oxide layer on the surface of a material. In particular, it is used to analyze thermal oxidation of silicon in semiconductor device fabrication. The model was first published in 1965… …   Wikipedia

  • Etching (microfabrication) — Etching tanks used to perform Piranha, Hydrofluoric acid or RCA clean on 4 inch wafer batches at LAAS technological facility in Toulouse, France Etching is used in microfabrication to chemically remove layers from the surface of a wafer during… …   Wikipedia

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  • Шокли, Уильям Брэдфорд — Уильям Брэдфорд Шокли англ. William Bradford Shockley Шокли в 1975 году Дата рождения: 13 февраля 1 …   Википедия

  • Thermische Oxidation von Silizium — Die thermische Oxidation von Silizium ist in der Halbleitertechnik ein Beschichtungsverfahren, bei dem auf einem einkristallinen Siliziumsubstrat (beispielsweise einem Silizium Wafer) eine dünne Schicht aus amorphen Siliziumdioxid aufgebracht… …   Deutsch Wikipedia

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